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| AOT2N60/AOTF2N60 600V, 2A N-Channel MOSFET General Description The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150C ID = 2A RDS(ON) < 4.4 (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G D G S D G S S Absolute Maximum Ratings TA=25C unless otherwise noted AOT2N60 Parameter AOTF2N60 Symbol VDS Drain-Source Voltage 600 VGS 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Units V V A A mJ mJ V/ns W W/ oC C C TC=25C TC=100C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL 2 1.6 8 2 60 120 5 74 0.6 -50 to 150 300 AOT2N60 65 0.5 1.7 2* 1.6* Avalanche Current C, G Repetitive avalanche energy C, G Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D 31 0.25 Symbol RJA A RCS Maximum Case-to-Sink RJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature. AOTF2N60 65 -4.0 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT2N60 / AOTF2N60 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS BVDSS /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Conditions ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=150C ID=250A, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=1A VDS=40V, ID=1A 3 4 3.6 3.5 0.79 1 2 8 215 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 23 2.2 3.5 7.8 VGS=10V, VDS=480V, ID=2A 1.5 3.9 VGS=10V, VDS=300V, ID=2A, RG=25 IF=2A,dI/dt=100A/s,VDS=100V 128 0.6 270 29 2.8 4.4 9.5 1.9 4.7 17.2 14.3 27 17 154 0.8 185 1.0 325 35 3.4 6.6 11.4 2.3 5.6 Min 600 700 0.56 1 10 100 5 4.4 Typ Max Units V V o V/ C A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/s,VDS=100V A. The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C, Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2A, VDD=50V, RG=25, Starting TJ=25C Rev 0. Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT2N60 / AOTF2N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10V 4 3 ID (A) ID(A) 6V 2 1 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 6.5 Normalized On-Resistance 6.0 5.5 RDS(ON) (m) 5.0 4.5 4.0 3.5 3.0 0 1 2 3 4 5 0 -100 -50 0 50 100 150 200 VGS=10V 2.5 VGS=10V ID=1A VGS=5.5V 0.1 2 4 6 8 10 1 6.5V 125C 10 VDS=40V -55C 25C VGS(Volts) Figure 2: Transfer Characteristics 200 16 2 1.5 1 0.5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 25C 1.0E-02 125C BVDSS (Normalized) 1.1 IS (A) 1 0.9 1.0E-03 1.0E-04 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.8 -100 TJ (oC) Figure 5: Break Down vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT2N60 / AOTF2N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 VDS=480V ID=2A Capacitance (pF) 100 1000 Ciss 12 VGS (Volts) 9 Coss 6 10 Crss 3 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 10 10 1 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1 100 200 16 10s RDS(ON) limited 100s ID (Amps) 10s RDS(ON) limited ID (Amps) 1 1 100s 1ms 10ms 0.1s 1s 10s DC 0.1 1ms 10ms 0.1s 0.1 DC TJ(Max)=150C TC=25C TJ(Max)=150C TC=25C 0.01 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT12N60 (Note F) 100 1000 0.01 1 10 100 VDS (Volts) 1000 Figure 10: Maximum Forward Biased Safe Operating Area for AOTF12N60 (Note F) 2.5 2.0 Current rating ID(A) 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 TCASE (C) Figure 11: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT2N60 / AOTF2N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.7C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT2N60 (Note F) 10 ZJC Normalized Transient Thermal Resistance 200 16 D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=4.0C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 T 10 100 1 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF2N60 (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT2N60 / AOTF2N60 Gate Charge Test Circuit & Waveform Vgs Qg + VD C 10V DUT Vgs Ig + VDC Vds Qgs Q gd - Charge Res istive Switching Test Circuit & Waveforms R L Vds Vds Vgs Rg Vgs DU T + VD C 90% Vdd 10% Vgs t d(o n) tr t on t d(off) t off tf Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI = 2 AR BVDSS + VDC Vdd - Id I AR Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs Qrr = - Idt Vds Vgs Ig Isd L Isd IF + VD C dI/dt IRM trr Vdd Vds - Vdd Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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